The Review of Laser Engineering
Online ISSN : 1349-6603
Print ISSN : 0387-0200
ISSN-L : 0387-0200
Reduction of Threshold Current of Semiconductor Lasers Using Quantum Well Structures
Atsushi KUROBEYutaka UEMATSU
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1987 Volume 15 Issue 12 Pages 1034-1042

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Abstract
The reduction of the threshold current using quantum well (QW) structures is reviewed both theoretically and experimentally. A theory which takes into account gain flattening due to the two-dimensionality of quantum well is used to analyze experimental results of QW laser structures with various number of quantum wells. The lowesthreshold current density is realized by using single and multi quantum wells at long and short cavity lengths. An optimum cavity length, which minimizes the threshold current, is inversely proportional to thenumber of quantum wells. Close comparison between theory and experiment are made and the theory is found to be useful in optimizing quantum well structures.
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© The Laser Society of Japan
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