High Power Semiconductor Lasers

Abstract

High power semiconductor lasers are reviewed and summarized from the aspects of power conversionefficiency and power limit available for the cavity structure. For high power operation of semiconductor laser, power conversion efficiency from electrical to optical power is very important. The guidelines to obtain highquantum efficiency are summarized and discussed.
Maximum output power of around 200m W/facet is available both for 0.85μm Al Ga As/Ga As and 1.3μm Ga In As P/In P lasers with sophisticated structures. For high-power application, phaselocked array laser is one of most promising device which can emit CW output of several watts.