Abstract
High-power InGaAlP laser diodes with a narrow-stripe and a broad-stripe structures have been investigated.Reduction in the optical power density at the cavity facet is effective for the realization ofhigh power operation for both types of lasers. A broad-stripe structure is useful for obtaining highoutput power levels exceeding 100mW. In designing such high power InGaAlP lasers, thermal effectsare very important, because InGaAlP has high thermal resistivity. The simulation analysis performedby using a self-consistent heat conduction model shows that the temperature rise in the active layeris considerably influenced by the cavity length and the cladding layer thickness, as well as heatsink/submount materials. High-power operation with output power levels exceeding 100mW wasrealized for a broad stripe InGaAlP laser with optimized structural parameters mounted on a diamondheat sink.
