Abstract
The deposition of a-Si: H/a-SiC: H multilayer film by ArF excimer laser chemical vapor deposition has been demonstrated. Each layer thickness was determined from a reactant gas pressure and a laser irradiation time. The XPS spectrum of the multilayer films shows that the chemical component of each layer changes periodically with an Ar ion etching time and X-ray diffraction intensity of the films shows that the period is in good agreement with the value calculated from the deposition rate. The optical measurement of the films shows that the optical bandgap of the multilayer films increased with decreasing a-Si: H layer thickness. The result can be interpreted in terms of the electron quantum confinement effect in the band structure of an amorphous semiconductor.
