Application of Laser Plasma X-Ray to the Study on Semiconductors

Abstract

This paper briefly reviews the laser-plasma pulse X-ray spectroscopy performed during laser annealing and laser ablation of silicon. A novel apparatus for the laser-plasma pulse X-ray spectroscopy introduced here enables us to measure a single event with one pulse of laser-plasma X-rays and is expected to be a very powerful technique for in-situ measurements during processing and the epitaxial growth of semiconductors and other materials.