Abstract
Resistless microfabrication of metallization of n-type GaAs formed by projection patterned doping using a KrF excimer laser is described. Silane (SiH4) gas is used as a source material of the ntype dopant of GaAs. Copper thin films with a linewidth as narrow as 2.35 μm are deposited selectively on the doped region by electroplating using an aqueous CuSO4 solution. By using the selective metallization process, nonalloyed ohmic contacts can be formed with a specific contact resistance of 2.32X10-5 Ωcm2, which is one-thirtieth of that of conventional alloyed contacts.
