Crystal Structure of AlGaInP for Visible Semiconductor Lasers and Device Characteristics

Abstract

The characteristic crystal structure (natural superlattice) of AlGaInP grown by metal-organic vapor phase epitaxy (MOVPE) for the use of visible semiconductor lasers, material depends on the growth conditions. This paper descibes the dependence of the crystal structure and the effect on the device characteristics and device designing. In this connection, short wavelength laser operation and a novel laser structure for high power operation are also described (briefly).