Semiconductor Laser Grown on a Si Substrate

Abstract

We have studied the heterointerfaces of single quantum wells (SQWs) and SQW laser characteristics grown on Si with AlGaAs/AlGaP intermediate layers (AlGaAs/AlGaP ILs) by MOCVD, and compared them with those grown by a two-step growth technique. The surface morphology and the heterointerfaces of SQWs on Si grown with the AlGaAs/AlGaP ILs are smoother than those grown by the two-step growth tehcnique. Thermal cycle annealing is also effective in obtaining the smoother heterointerfaces. Photoluminescence at 4.2 K and cross-sectional transmission electron microscopy show that the fluctuation of heterointerfaces is caused by three-dimensional growth at the initial stage and propagation of dislocations. The characteristics of the lasers on Si grown with the AlGaAs/AlGaP ILs are superior to those of lasers grown by the two-step growth technique.