Measurement of Si Atoms in RF Silane Plasma by Absorption Spectroscopy using a Ring Dye Laser

Abstract

The absorption profile of the Si 288.2 nm line (3p^{2 1}D2-3p4s ¹P₁) in a cw-RF SiH₄ (10%) /Ar plasma generated in a plasma CVD chamber was determined by absorption spectroscopy using a ring dye laser. The Si atom density at the 3p^{2 1}D₂ level and the Si translational temperature were measured as functions of input power and total pressure in the cw-RF SiH₄ (10%) /Ar plasma.