A Fundamental Transverse Mode, 200 mW Laser Diode

Kimihide MINAKUCHI; Atushi TAJIRI; Yasuyuki BESSHO; Koji KOMEDA; Keiichi YODOSHI; Takao YAMAGUCHI

doi:10.2184/lsj.21.2_305

Kimihide MINAKUCHI, Atushi TAJIRI, Yasuyuki BESSHO, Koji KOMEDA, Keiichi YODOSHI, Takao YAMAGUCHI

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Keywords: High power, SHG, AlGaAs, P-cladding layer, Cavity length

JOURNAL FREE ACCESS

1993 Volume 21 Issue 2 Pages 305-311

DOI https://doi.org/10.2184/lsj.21.2_305

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Abstract

A fundamental transverse mode, 200 mW high-power laser diode that oscillates at a wavelength of 860 nm for use as a light source for SHG devices has been developed. The maximum output power was 500 mW under CW operation. Stable operation under an output power of 200 mW was confirmed for more than 1, 000 hours at 50 °C

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