Abstract
The oscillation wavelength shift of a semiconductor laser in a magnetic field has been known since the early 60's. This research was made at very low temperatures and in very strong magnetic fields and the observed wavelength shift was toward a short wavelength side. The quantum wire and box lasers were discussed by using the effect of strong magnetic fields. These results were well accounted for in terms of the Landau level. The wavelength shift in a relatively weak magnetic field at room temperature by using Fabry-Perot type laser diodes was reported recently. The longer wavelength side shift and the output laser power decrease were observed simultaneously in a certain magnetic field direction. Since these changes observed in magnetic fields correspond to changes observed in a high temperature, it is assumed that the magnetic field increases the temperature around the active layer of the semiconductor laser.
