Abstract
Study of semiconductor process using synchrotron radiation (SR) started about ten yearsago. SR stimulated gas source molecular beam epitaxy (MBE) is considered to be in the mostadvanced stage. Characteristics of SR gas source MBE using Si2H6 and SiH2Cl2 gases are investigated. To investigate the reaction mechanisms with SR stimulated processes, infrared reflection absorption spectroscopy using buried metal layer substrate (BML-IRAS) has been developpedand applied to the in situ observation of surface SiHn species during the SR depositionof a-Si. Another important subject in this field is the material selectivity observed inseveral reactions, which is considered to be an unique phenomena of the core electron excitationsand may be due to the difference of the electronic excited state lifetime. I expect that the X-ray laser having characteristics of high intensity and monochromaticity and ultra short pulsemay bring a break-through into the dynamical study of the core electron excitations.
