Abstract
As applications of a mid-infrared free electron laser (FEL) to semiconductor research, heterojunction interface analysis, evaluation of ultrafast optical switches using quantum wells, and laser annealing of SiC have been investigated. Band discontinuities at a variety of heterojunctions have been determined precisely using FEL internal photo-emission spectroscopy. Ultrafast all-optical switching has been confirmed for the quantum well devices employing picosecond pulses from the FEL. N-ion-implanted SiC has been successfully annealed in terms of crystallinity and electrical property by irradiation of FEL at wavelengths corresponding to Si-C stretching mode and local vibration mode of implanted N atoms, respectively.
