Abstract
Characteristics of lateral phase control with a Talbot self-imaging cavity, which can offer lateral coherence among array type semiconductor lasers, is described. A Talbot cavity with a 1/4 Talbot distance can select a highest array mode, which is characterized by a double peak far-field pattern. So far, the number of broad area diodes that are coherently coupled with the highest array mode is limited around 10. Precise management of emission characteristics of emitters in arrays, and optimization of array fill factors could increase the number of phased arrays, resulting in higher brightness in the far-field.
