Abstract
In order to clarify an influence of initial spin density or optical absorption coefficienton the pulsed-laser annealing effect, we have performed systematically ion backscatteringand channeling (RBS) analysis and ESR measurement as a function of spindensities in ion-implanted Si samples. An effect of implanted ion species has also beeninvestigated. It was found that the initial spin density can yield a good criterion forpredicting the annealing effect below implanted doses of 1×1016 /cm2 because the spindensity is strongly correlated with the optical absorption coefficient. From spindensitymeasurement, the initial absorption coefficient of as-implanted Si layer was foundto be a very important factor which dominates the effect of laser annealing even if thereis a nonlinear absorption mechanism. As to impurity effect, it was also clarified thatlaser annealing effects are much different among ion species. This seems to be duemainly to the difference of segregation coefficient of impurity in Si.
