Pulsed Laser Annealing of GaAs

Annealing Behavior of Implantation Damages and Deep Levels

Abstract

In order to reveal possible reason responsible for no activation observed in E lowdose implanted GaAs, pulsed ruby laser annealing effects in proton implanted n-typeGaAs and Cr-doped semi-insulating GaAs have been investigate by means of C-V, carrier profile, DLTS and OTCS measurements. In the sample implanted with 30 keV protons to a dose of 10¹²/cm², a significant recovery in carrier concentration and adecrease in concentration of implantation induced damage centers were observed after the laser annealing. However damage centers around 5×10¹⁵/cm³ still remained. The thickness of fully compensated layer generated by 10¹⁴/c² proton implantation decreased little by the laser annealing. These results suggested that main residual damages in implanted laser annealed GaAs were related with implantation induced damages. A level with an activation energy of 0.86 eV associated with laser irradiation induced damages was detected by OTCS and was considered to locate near the surface.