Materia Japan
Online ISSN : 1884-5843
Print ISSN : 1340-2625
ISSN-L : 1340-2625
The Effects of Hydrogen Doping on Expansion of a Process Zone of Cz Silicon Single Crystals
Wataru Sugimura, Toshiaki Ono, Masataka Hourai, Kenji Higashida
Author information
Keywords: silicon, hydrogen, doping, defect, crave, COP, dislocation
JOURNAL FREE ACCESS

2014 Volume 53 Issue 10 Pages 454-457

Details
Download PDF (3715K)
Download citation RIS

(compatible with EndNote, Reference Manager, ProCite, RefWorks)

BIB TEX

(compatible with BibDesk, LaTeX)

Text
How to download citation
Contact us
Article 1st page
Content from these authors
© 2014 The Japan Institute of Metals and Materials
Previous article Next article
Favorites & Alerts

Recently viewed articles
Predecessor

Bulletin of the Japan Institute of Metals

Share this page
feedback
 Top