Materia Japan
Online ISSN : 1884-5843
Print ISSN : 1340-2625
ISSN-L : 1340-2625
[title in Japanese]
Seiichi Shishiguchi
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Keywords: metal-oxide-semiconductor field-effect-transistor, shallow juction, sourece, drain, very large scall of intergration, ion implantation
JOURNAL FREE ACCESS

1999 Volume 38 Issue 2 Pages 111-114

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