Materia Japan
Online ISSN : 1884-5843
Print ISSN : 1340-2625
ISSN-L : 1340-2625
Epitaxial Growth of CeO2, Thin Film on Si (001) Wafer Using YSZ Seeding Layer
Takanori KiguchiNaoki WakiyaKazuo ShinozakiNobuyasu Mizutani
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2004 Volume 43 Issue 12 Pages 988

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© The Japan Institute of Metals
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