Materia Japan
Online ISSN : 1884-5843
Print ISSN : 1340-2625
ISSN-L : 1340-2625
Materials Showing Electric-field-Induced Resistance Switching for Nonvolatile Memory Applications
Takuro Katsufuji
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Keywords: resistance random access memory, perovskite manganites, nonvolatile, polarity-dependent, transition-metal oxides, interface, Schottky contact, oxygen defect
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2007 Volume 46 Issue 6 Pages 395-401

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