Abstract
Firstly, the preparation of the thin specimen with a semi-spherical curvature 50 μm in thickness, where the compositional graded layer is put into between the epitaxial GaAs0.6, P0.4 layer and the GaAs substrate, is described. Secondly, the X-ray Laue method with white X-rays is applied to the curvature radius measurement of this specimen, having the radius of 20 to 73 cm. Thirdly, the X-ray Laue method using the characteristic X-rays to this curved specimen is devised to observe the microstructure in diffraction spots. The modified Leonhard chart to bring the specimen to the characteristic Bragg angle position is devised by us. Finally, the Burgers vector of the dislocations is identified to be ⟨110⟩ type, and the reason of the image sharpness of the dislocations is discussed.
