Ferromagnetic Schottky junctions using diamond semiconductors

Abstract

  Ferromagnetic Schottky junctions using Co_1-xFe_x or Ni_1-x Fe_x (x = 0∼1) were fabricated on H-terminated diamond and their interfacial characteristics were evaluated. A clear work function dependence of the Schottky barrier height (Φ_B) was obtained for these junctions, indicating that the Schottky barrier height between H-terminated diamond and ferromagnetic metals can be controlled by selecting metals with appropriate work functions. Φ_B for Ni and NiFe, which have higher work functions above 5 eV, is lower than Φ_B for other ferromagnetic metals. These results indicate that ferromagnetic metals with higher work function are promising for spin injection into diamond semiconductors.