Journal of Japan Society of Fluid Mechanics
Online ISSN : 2185-4912
Print ISSN : 0286-3154
ISSN-L : 0286-3154
Melt Flow during Silicon Crystal Growth
Koichi KAKIMOTOMasahito WATANABEMinoru EGUCHITaketoshi HIBIYA
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1994 Volume 13 Issue 1 Pages 5-15

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Abstract
The quality of large semiconductor crystals grown from silicon melts is significantly affected by the heat and mass transfer in the melt. The characteristics of silicon flows are reviewed by focusing on the Coriolis force in the rotating melt. Description of flow instability is included that shows our level of understanding of melt convection with a low Prandtl number.
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