Abstract
The effect of E×B on the flow field of a slightly ionized gas between parallel coldconducting plane walls is investigated theoretically. The gas flows in the direction parallel to conducting walls. A subject of investigation is limited in the sheath region where Ohm's law and Poisson's equation are used. When the magnetic field increases, the thickness of sheath region decreases and then capturing voltage of ion decreases. When gas speed increases, the sheath thickness does not change and the decrease of ion number density is relatively small compared with that without magnetic field.
