Abstract
Wet chemical ethching is used for making microscopical products like lead frames, printed wiring boards, shadow masks and so on. We investigate numerically fluid dynamical aspects and mass transport phenomena nearby the etching cavity, using a standard two dimensional MAC method. Etching is assumed to be limited by removal of the dissolution products away from the vicinity of the active suface. In addition, the shape evolution of etching cavity is computed in a quasistationary manner.