Phase-Field Simulation of Self-Assembled Quantum Dots

Abstract

A phase-field model for self-assembled quantum dot formation has been developed in which the surface morphologies are determined to be dependent on the balance between the surface energy and the elastic strain energy caused by the lattice mismatch strain. The facet morphologies, which are often observed in semiconductor materials, have also been modeled using the generalized gradient correction coefficient for a crystal with a high anisotropy of surface energy. The variations of surface morphologies and energies have been examined by performing two-dimensional phase-field simulations for the annealing process of heteroepitaxial film. By taking sixteen-fold anisotropy into consideration, the multifaceted islands, which change shape with film thickness, can be created. The differences in morphological change and energy variations due to the mode number of the surface energy anisotropy have also been evaluated.