Abstract
SynopsisThe preparation of organic－inorganic hybrid gate insulating materials of poly(methyl silsesquioxane) (PMSQ) at a low processing temperature has been studied for use in organic thin fi lm transistors (O-TFTs) by the solution process. It is found that the electrical resistivity of a PMSQ fi lm synthesized by a sol－gel method is signifi cantly infl uenced by the synthesis conditions such as organic solvent and reaction procedure. PMSQ fi lms prepared in toluene show a high resistivity of over 1014Ωcm even at a low thermal treatment of 150°C, which is attributed to the decrease in the silanol concentration of the PMSQ fi lms. PMSQ had low leakage current derived from less mobile ionic impurities, which is an essential factor for gate insulating materials. Top-contact O-TFT fabricated on a PMSQ gate insulator using poly(3-hexylthiophene) (P3HT) exhibits mobility improvement similarly to devices with self-assembled monolayer-modified SiO2 insulating materials.The chemical modification of PMSQ could be provided higher dielectric constants for low driving voltage and photofunctionality for photolithographic properties.
