NIPPON KAGAKU KAISHI
Online ISSN : 2185-0925
Print ISSN : 0369-4577
The Crystal Structure of Lanthanum Silicon Triarsenide (LaSiAs3)
Hiroshi HAYAKAWAAkira SUZUKIShuitiro ONO
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1984 Volume 1984 Issue 5 Pages 697-701

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Abstract

National Chemical Laboratory for Industry Yatabe, Tsukuba-gun, Ibaraki 305 Japan _Lanthanum silicon triarsenide (F-type), LaSiAs3, crystallizes in the orthorhombic system, space group Pbca, with a=6 084( 1 ), b=5 986( 1 ), c=26 235( 3 ), Åz=8. The single crystals were prepared by cooling the melt slowly from 1000°C under the arsenic pressure of 2.5 atm. The crystal structure was determined from 1272 independent X-ray diffraction intensities by the Patterson method, and refined to R=0.063 by the full-matrix least squares method. It has a pseudo face-centered lattice and is closely related to the layer structure of CeSiP3 (P-type), [Pn21a, a=5.861, b=5.712, c=25.295 Å] previously reported. The layer sequence along c-axis can be described as
[As2]-[La][Si2As4][La]As2[La]Si2As4-La-As2La-La distance is 4.27 A in the [La] layer. La is coordinated to five As's of the [Si2As4]layer in 3.09-3.18 Å and to four As's of the [As2] layer in 3.20-3.23Å. The As-As distances in the [As2] layer are 2.99 and 3.04 Å. The [Si2As4] layer has the same structure as the corresponding layer of CeSiP3. In this layer, alternate Si and As atoms form a twodimensional infinite network of six-membered rings with boat conformation, Si-As distances being 2.34-2.37 A. The [As2] layer seems to have no long range ordering of the zigzag chain which is observed in the CeSiP3 structure.

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