Structural and Electrical Properties of Mo/AI Multilayers Synthesized by Sputtering

Abstract

Multilayers of Mo/AI were synthesized by an rf magnetron sputtering system with a rotating table and only one cathode. The modulation wavelengths ranged from 600Å down to 17Å. The structural properties have been studied by using X-ray diffraction. Films were composed of layers of bcc Mo and fcc Al oriented along the [110] and [111]directions, respectively. To understand the X-ray data, model calculations based on a simple scattering theory were performed. A trapezoidal wave model was found to be in good qualitative agreement with the measurements. The in-plane resistivity was measured as a function of wavelengths and temperature in the range 4-280 K by a four electrode method. The resistivity did not saturate even at very small wavelength and depended linearly on theinverse wavelength for wavelengths larger than 60 Å. The temperature coefficient of resistivity (TCR) changed sign at about 60Å in this system.