Preparation and Electric Properties of Ferroelectric Bi₄Ti₃O₁₂ Thin Films by MOCVD

Abstract

Bismuth titanate film was prepared by the simultaneous deposition of Bi₂O₃ and TiO₂ on heated substrates at 750 °C under a reduced pressure of 6 Torr. Triphenyl bismuth and tetraisopropoxy titanium were used as source materials.