Synthesis of High Purity [Ta(dpm), ]Cl for Preparation of Ta205 Fhin Tilrns by MOCVD

Abstract

Synthesis of highly pure dipivaloylmethane (Hdpm) chelates of Tantalum(V) was investigated. The chelates were synthesized by the reaction of the ligands with Tantalum pentachlcride using anhydrous solvents under high purity argon gas atmosphere.
[Ta(dpm)₄]Cl was syntesized as a new source material for p reparation of Ta₂O₅ thin films by MOCVD. [Ta(dpm)₄]Cl was in good agreement with the calculated value in the results of ICP and elemental analysis, and was confirmed by FT-IR, ₁H-NMR, ₁₃C-NMR, and TGDTA. Vaporization of impurities was not found in TG measurement. The tantalum complex vaporized in the range of 220 to 360 °C without residue.
[Ta(dpm)₄]Cl proved to be superior in volatility and purity for the MOCVD source material.