NIPPON KAGAKU KAISHI
Online ISSN : 2185-0925
Print ISSN : 0369-4577
Excited GeF2 Formation in rf-glow-discharge of GeH4-CF4-H2 Mixtures
Shigeru YAGITsuyoshi OHTANoriyoshi TAKAHASHIKazuhito SAITOKinich OBI
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1994 Volume 1994 Issue 3 Pages 231-239

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Abstract
Anomalous intense ultraviolet emission bands in the region 320-370 nm with a maximum at 340 nm were observed in radio frequency (rf) glow discharges of CF4-H2m ixtures containing 0.3-1 % of GeH4. The corresponding emission system was not observed in the discharge spectra of GeH4-CH4-H2 and SiH4-CF4-H2 mxtures.
Intense ultra violet emission bands around 340 nm were also measured in microwave and rf glow discharges of GeF4. From the vibrational analysis of the bands, it was found that these 340 nm emission bands completely agree with weak emission system of GeF2, which has been tentatively assigned, in earlier work, as the 3B1-1A1ta rnsition. It confirmed that the emissive carrier is GeF2 and a rearrangement reaction occurs in the plasma of GeH4-CF4-H2 mxtures.
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