Low Melting Point Copper Precursor to Prepare YBa₂Cu₃O_7-δ Thin Films by Metalorganic Chemical Vapor Deposition

Abstract

A low melting point copper complex was found as a copper precursor which can be vaporized in the liquid state when YBa₂Cu₃O_7-δ thin films are prepared by metalorganic chemical vapor deposition (MOCVD). It is confirmed that bis (6-ethyl-2, 2-dimethyl-3, 5-octanedionato) copper (Cu (EDMOD) ₂) is suited for a copper precursor for MOCVD from the result of melting point measurement and thermal analysis. CuO thin films could be prepared by MOCVD using liquid Cu (EDMOD) ₂ heated at the temperature higher than its melting point (78 °C).
It is expected that Cu (EDMOD) ₂ can be used in the range of 80-90 °C as a copper precursor to prepare YBa₂Cu₃O_7-δ by comparison with one of the conventional copper precursors, bis (isobutyrylpivaloylmethanato)copper (Cu (IBPM)₂).