Nonlinear Theory and Its Applications, IEICE
Online ISSN : 2185-4106
ISSN-L : 2185-4106
Special Issue on Recent Advances in Device Modeling
Device simulation of negative-capacitance field-effect transistors with a uniaxial ferroelectric gate insulator
Junichi HattoriTsutomu IkegamiKoichi FukudaHiroyuki OtaShinji MigitaHidehiro Asai
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2020 Volume 11 Issue 2 Pages 145-156


We model the behavior of uniaxial ferroelectrics and simulate planar negative-capacitance (NC) field-effect transistors (FETs) having a gate insulating film made of a uniaxial ferroelectric. The behavior of such NC FETs strongly depends on the direction of the ferroelectric polarization axis. When the direction is away from being parallel to the ferroelectric film to some extent, the ferroelectric polarization becomes larger than the paraelectric polarization and the ferroelectric film begins to act as a negative capacitor. The NC FETs can then be switched on and off more steeply than conventional metal-oxide-semiconductor FETs. This NC effect is maximized at that moment and becomes weaker as the direction approaches perpendicular to the ferroelectric film.

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© 2020 The Institute of Electronics, Information and Communication Engineers
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