2018 Volume 9 Issue 3 Pages 344-357
We propose a physics-based model of interelectrode parasitic elements of a V-groove SiC power MOSFET with buried p-layers. The proposed model considers the voltage dependence of parasitic resistances and capacitances on the basis of the observations through technology computer aided design (TCAD) simulations. The gate-voltage dependence of the body diode is also modeled in accordance with device physics. Through comparison with measurement results, it is demonstrated that the proposed model successfully reproduces both I-V and C-V characteristics. The transient behavior using a buck converter is also well reproduced.