Nonlinear Theory and Its Applications, IEICE
Online ISSN : 2185-4106
Special issue on power distribution and processing
Modeling of interelectrode parasitic elements of V-groove SiC MOSFET
Rui ZhouMichihiro ShintaniMasayuki HiromotoTakashi Sato
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2018 Volume 9 Issue 3 Pages 344-357

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Abstract

We propose a physics-based model of interelectrode parasitic elements of a V-groove SiC power MOSFET with buried p-layers. The proposed model considers the voltage dependence of parasitic resistances and capacitances on the basis of the observations through technology computer aided design (TCAD) simulations. The gate-voltage dependence of the body diode is also modeled in accordance with device physics. Through comparison with measurement results, it is demonstrated that the proposed model successfully reproduces both I-V and C-V characteristics. The transient behavior using a buck converter is also well reproduced.

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© 2018 The Institute of Electronics, Information and Communication Engineers
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