Process simulation

-Ion implantation-

Abstract

This article explains models and methods used for simulating the ion implantation process in ULSI process simulation. The Monte Carlo simulation method is the focus of this study. To obtain reasonable simulation results, not only silicon crystal structure but also its thermal vibration and damaging process must be taken into account. On the other hand, the electronic stopping model and the binary collision approximation in the low energy range have accuracy problems and further improvement is necessary.