Heteroepitaxy of GaAs- and GaN-based materials on Si and their device applications

Abstract

The research results on heteroepitaxial compound semiconductors based on Silicon (Si) have been compiled. In particular, existing problems on the heteroepitaxial growth of GaAs on Si, InP on Si and GaN on Si are discussed. Emphasis is also given to the application of light-emitting diode, laser, solar cell and various field effect transistors on Si in addition, the problems regarding their industrial application are identified and their reasonable practical solutions are presented.