Recessed gate nitride field effect transistor with high transconductance characteristics

Abstract

Gallium Nitride (GaN material) has high breakdown voltage and high saturation velocity characteristics. Moreover, two-dimensional electron gas (2DEG) with high electron mobility can be generated at the AlGaN/GaN heterointerface. For these reasons, an AlGaN/GaN HEMT has been expected as a new-generation high-power and high-frequency device. For the development of a high performance AlGaN/GaN-HEMT, both 2DEG with high electron density and low parasitic resistance characteristics is needed. We have been proposing that a recessed gate structure can realize these demands. In this paper, we report that the recessed gate AlGaN/GaN-HEMT fabricated on the SiC substrate showed extremely high transconductance and high frequency characteristics.