Synthesis of GaN powder and doping with luminescent impurities by the two-stage vapor-phase method

Abstract

The two-stage vapor-phase method has been developed for the synthesis of gallium nitride (GaN) powder, which is a promising phosphor material. This novel method consists of the stages of seed formation and particle growth, at which two appropriate chemical reactions are preceeded in a gas flow, and is expected to allow the efficient synthesis of GaN powder and high controllability of its properties.