Performance limits of silicon power devices

Abstract

From the long history of the silicon-based power semiconductor family, the basic structures of representative devices like IGBT and GTO are used in this study, including device model and related physics, to briefly explain limits concerning reduction of their on-state voltage drop and elevation of their voltage blocking capability. In the final part, discussions on performance of existing devices and their further prospects have been made, comparing their characteristics with the theoretical limits of silicon and silicon carbide.