2005 Volume 74 Issue 2 Pages 220-227
Recently, there has been considerable interest and R&D effort placed on silicon carbide (SiC) single crystals due to their applicability to low-loss and high-power electronic devices. The issue of large high-quality SiC single crystal substrates with high-quality homoepitaxial thin films is critical to the development of SiC power device technology. In this article, the current SiC crystal growth technology is outlined. The basic principles and important technological aspects of SiC bulk crystal growth and epitaxial thin film growth are described. Recent topics on this technology are also presented.
