Deposition of a-Si:H films using cluster-controlled plasma CVD

Abstract

Cluster-controlled plasma chemical vapor deposition (CVD) has two directions that allow us to control the film structure and properties: one is the direction in which the contribution of clusters to film formation is suppressed to improve film qualities, and the other is the direction in which nanoparticle composite films are formed. In this paper, we focus on the former direction, and describe an in-situ observation method of the behavior of clusters as well as a control method of cluster formation, growth, and removal that allows us to realize cluster-controlled plasma CVD.