Control of exciton fine structure splitting in atomic layer nitrogen doped GaAs and development for photon sources

Abstract

Dilute impurity doping in semiconductors can be applied to fabricate ultimately uniform quantum dots because of their unique electronic structure. These dots are expected to be used in devices based on the interactions between excitons and photons. We introduce our technique of nitrogen delta-doping into GaAs and verify the properties of the exciton fine structure polarization splitting. Furthermore, control of the exciton fine structure is discussed as a novel photon source.