Novel technology for GaN film growth on sapphire substrate

Abstract

A novel growth technology for nonpolar m-plane GaN and semipolar {11-22} GaN films was developed. Nonpolar m-plane GaN films can be grown through the growth of c-plane GaN from the c-plane-like sidewall of the trench structure of an a-plane patterned sapphire substrate (PSS). On the other hand, semipolar {11-22} plane GaN films can be grown through the growth of c-plane GaN from the inclined c-plane-like sidewall of a trench structure fabricated on an r-plane PSS.