2010 Volume 79 Issue 9 Pages 832-835
To precisely control the dielectric constant and structure of a low-k SiOC film, we have developed a neutral-beam-enhanced chemical vapor deposition (NBECVD) method. By Ar NBECVD, we can precisely control the dielectric constant and modulus of a low-k SiOC film deposited on a Si substrate because this method prevents precursor dissociation due to electron collisions and UV photons in plasma. Optimizing the ratio between Si-O and Si- (CH3)x as well as the proportions of linear (two-dimensional SiOC), network and cage (three-dimensional SiOC) structures by changing the precursor, we obtained a k value of less than 1.7 and an integration-possible modulus (>4GPa) using dimethyl dimethoxy silane as a precursor. Additionally, the NBECVD method is applicable to the deposition of a damage-free super-low-k film on an underlying low-k film that is sensitive to damage by the plasma.
