X-ray photoelectron spectroscopy study on Si nanostructures

Abstract

X-ray photoelectron spectroscopy (XPS) is reviewed for use in semiconductor research mainly for the characterization of Si nanostructures. The history of XPS and the analytical method for a photoelectron spectrum are explained from a practical viewpoint. In addition, novel methods for the measurement and analysis of a photoelectron spectrum that are useful for the development of advanced MOSFETs are introduced.