2011 Volume 80 Issue 4 Pages 314-318
Ultraviolet light-emitting diodes (LEDs) were fabricated employing heteroepitaxial (MgZn)O/ZnO junctions grown by molecular beam epitaxy. Much effort was paid to grow clean and highly crystalline films through careful optimization of substrate cleaning, suitable choice of a substrate holder, and appropriate measurement of substrate temperature. The choices of ammonia as the nitrogen source and the Zn-polar surface of substrates have lead us to the success in fabricating p-type (MgZn)O. Near-band-edge electroluminescence (380nm) dominated the emission spectra and the output power reached 70μW at an injection current of 30mA.
