Through-silicon-via technology for realizing three-dimensional integrated circuits

Abstract

A through-silicon-via (TSV) is the core technology for realizing next-generation three-dimensional integrated circuits. It uses a vertical conducting path through silicon chips, instead of the wiring on the chip surface. The technology combines a conventional wafer process and packaging technologies, such as deep ion etching, wafer thining, chip stacking, bump formation, and copper plating.