Recent R&D toward diamond power switching device

Abstract

Due to its extreme properties, diamond has an excellent figure of merit (FOM) for high power switching devices. It is expected as a next generation material; however, R&D has been limited due to its overly small size single crystal. Recently, we have developed two state-of-the-art technologies for a large size single crystal wafer, and succeeded in making 20x40mm² size wafers by utilizing the so-called direct wafer fabrication technique” and the “Mosaic technique”. Now, a 2 inch size diamond wafer is expected in the very near future. Also for the device, we have successfully demonstrated a 250°C switching operation with a high speed and low loss type of Schottky barrier diode to verify the advantages of the diamond.