Ⅲ-Ⅴ/Ge device technologies for electronic-photonic integrated circuits on the Si platform

Abstract

High mobility Ⅲ-Ⅴ compound semiconductors and Ge have been the most promising channel materials for future metal-oxide-semiconductor (MOS) field-effect transistors (FETs) beyond the traditional device scaling of Si MOSFETs. Heterogeneous integration of Ⅲ-Ⅴ compound semiconductors and Ge on the Si platform has been intensely investigated, enabling monolithic integration of Ⅲ-Ⅴ and Ge-based photonics by complementary metal-oxide-semiconductor (CMOS) processes, owing to their superior optical properties. In this paper, we will review the research trends for Ⅲ-Ⅴ/Ge device technologies for electronic-photonic integrated circuits (EPIC) on the Si platform.